DH026N06E Specs and Replacement

Type Designator: DH026N06E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 312 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 238 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 155 nC

tr ⓘ - Rise Time: 255 nS

Cossⓘ - Output Capacitance: 685 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm

Package: TO263

DH026N06E substitution

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DH026N06E datasheet

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 dh026n06 dh026n06f dh026n06i dh026n06e dh026n06d dh026n06b.pdf pdf_icon

DH026N06E

DH026N06/DH026N06F/DH026N06I/ DH026N06E/DH026N06D/DH026N06B 238A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 60V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 2.6m DS(on) (Type) G standard. 1 I = 238A 3 S D 2 Features Low on res... See More ⇒

Detailed specifications: DH400P06F, DH400P06I, DH400P06LB, DH400P06LD, DH025N08, DH026N06, DH026N06B, DH026N06D, 8N60, DH026N06F, DH026N06I, DH028N03, DH028N03B, DH028N03D, DH028N03E, DH028N03F, DH028N03I

Keywords - DH026N06E MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.