All MOSFET. DH028N03I Datasheet

 

DH028N03I Datasheet and Replacement


   Type Designator: DH028N03I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 145 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 118 nS
   Cossⓘ - Output Capacitance: 560 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: TO262
 

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DH028N03I Datasheet (PDF)

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DH028N03I

DH028N03/DH028N03F/DH028N03EDH028N03I/DH028N03B/DH028N03D145A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 2.7mDS(on) (TYP)standard.13 SI = 145AD2 Features Low on resi

Datasheet: DH026N06E , DH026N06F , DH026N06I , DH028N03 , DH028N03B , DH028N03D , DH028N03E , DH028N03F , RU7088R , DH029N08 , DH029N08B , DH029N08D , DH100P28 , DH100P28B , DH100P28D , DH100P28E , DH100P28F .

History: OSG70R1K4FF | IXTA4N150HV | PMZ320UPE | 2SK2130 | SLD60R380S2

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