DH029N08D Specs and Replacement

Type Designator: DH029N08D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 245 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 1030 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO3P

DH029N08D substitution

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DH029N08D datasheet

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 dh029n08 dhi029n08 dhe029n08 dh029n08d dh029n08b.pdf pdf_icon

DH029N08D

DH029N08/DHI029N08/DHE029N08/ DH029N08D/DH029N08B 180A 80V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent 2 D Rdson and low gate charge. Which accords with the RoHS V = 80V DSS standard. G R = 2.9m DS(on) (Type) 1 2 Features 3 S I = 180A D Fast switching L... See More ⇒

Detailed specifications: DH028N03, DH028N03B, DH028N03D, DH028N03E, DH028N03F, DH028N03I, DH029N08, DH029N08B, IRLB3034, DH100P28, DH100P28B, DH100P28D, DH100P28E, DH100P28F, DH100P28I, DH100P30A, DH100P30AB

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