All MOSFET. DH033N03F Datasheet

 

DH033N03F Datasheet and Replacement


   Type Designator: DH033N03F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 113 nS
   Cossⓘ - Output Capacitance: 315 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO220F
 

 DH033N03F substitution

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DH033N03F Datasheet (PDF)

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dh033n03 dh033n03f dh033n03i dh033n03e dh033n03b dh033n03d.pdf pdf_icon

DH033N03F

DH033N03/DH033N03F/DH033N03I/DH033N03E/DH033N03B/DH033N03D100A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced mode power vdmosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR =3.3mDS(on) (TYP)Gstandard.1I = 100AD3 S2 Features Low switchin

 6.1. Size:696K  cn wxdh
dh033n03r.pdf pdf_icon

DH033N03F

DH033N03R65A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced mode power vdmosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR =3.4mDS(on) (TYP)Gstandard.1I = 65A3 S D2 Features= Low switching loss= Low on resistance= Low gate c

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dh033n04p.pdf pdf_icon

DH033N03F

DH033N04P96A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 3.5mDS(on) (TYP)standard.13 SI = 96AD2 Features Low on resistance Low gate charge Fast switching

 7.2. Size:1190K  cn wxdh
dh033n04 dh033n04f dh033n04i dh033n04e dh033n04b dh033n04d.pdf pdf_icon

DH033N03F

DH033N04/DH033N04F/DH033N04I/DH033N04E/DH033N04B/DH033N04D120A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 3.5mDS(on) (TYP)standard.13 SI = 120AD2 Features Low on res

Datasheet: DH100P30CB , DH100P30CD , DH100P30CE , DH030N03P , DH033N03 , DH033N03B , DH033N03D , DH033N03E , IRF640 , DH033N03I , DH033N03R , DH033N04 , DH033N04B , DH033N04D , DH033N04E , DH033N04F , DH033N04I .

History: FTK80N10P | TSM3548DCX6 | CHM6060RNGP | 2SK2007 | RK7002T116 | SIHFBC30A | SM6107PSU

Keywords - DH033N03F MOSFET datasheet

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