DH033N03F - Даташиты. Аналоги. Основные параметры
Наименование производителя: DH033N03F
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 35 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 113 ns
Cossⓘ - Выходная емкость: 315 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
Тип корпуса: TO220F
Аналог (замена) для DH033N03F
DH033N03F Datasheet (PDF)
dh033n03 dh033n03f dh033n03i dh033n03e dh033n03b dh033n03d.pdf

DH033N03/DH033N03F/DH033N03I/DH033N03E/DH033N03B/DH033N03D100A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced mode power vdmosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR =3.3mDS(on) (TYP)Gstandard.1I = 100AD3 S2 Features Low switchin
dh033n03r.pdf

DH033N03R65A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced mode power vdmosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR =3.4mDS(on) (TYP)Gstandard.1I = 65A3 S D2 Features= Low switching loss= Low on resistance= Low gate c
dh033n04p.pdf

DH033N04P96A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 3.5mDS(on) (TYP)standard.13 SI = 96AD2 Features Low on resistance Low gate charge Fast switching
dh033n04 dh033n04f dh033n04i dh033n04e dh033n04b dh033n04d.pdf

DH033N04/DH033N04F/DH033N04I/DH033N04E/DH033N04B/DH033N04D120A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 3.5mDS(on) (TYP)standard.13 SI = 120AD2 Features Low on res
Другие MOSFET... DH100P30CB , DH100P30CD , DH100P30CE , DH030N03P , DH033N03 , DH033N03B , DH033N03D , DH033N03E , IRFP460 , DH033N03I , DH033N03R , DH033N04 , DH033N04B , DH033N04D , DH033N04E , DH033N04F , DH033N04I .
History: HY4008PM | JCS2N65V | BLP02N06-D | SFF23N60S1 | MTN5N60FP | IRF5EA1310
History: HY4008PM | JCS2N65V | BLP02N06-D | SFF23N60S1 | MTN5N60FP | IRF5EA1310



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