HUF76413DKF085 Specs and Replacement
Type Designator: HUF76413DKF085
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 5.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
Package: SO8
HUF76413DKF085 substitution
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HUF76413DKF085 datasheet
huf76413dk f085.pdf
October 2010 HUFA76413DK8T_F085 N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56m General Description These N-Channel power MOSFETs are manufactured us- Applications ing the innovative UltraFET process. This advanced pro- Motor and Load Control cess technology achieves the lowest possible on- resistance per silicon area, resulting in outstanding perfor- Powertr... See More ⇒
huf76413p3.pdf
HUF76413P3 Data Sheet November 1999 File Number 4723.1 22A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB Ultra Low On-Resistance - rDS(ON) = 0.049 , VGS = 10V SOURCE - rDS(ON) = 0.056 , VGS = 5V DRAIN GATE Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models - Spice and SABER Thermal Im... See More ⇒
Detailed specifications: FQS4900 , FCI25N60N , FQS4901 , FCP25N60N , FQS4903 , FQT13N06 , FQT13N06L , FQT1N60C , RU7088R , FQT1N80 , HUF76407DKF085 , FQT3P20 , FQT4N20L , FDD14AN06LF085 , FQT4N25 , FQT5P10 , FQT7N10 .
Keywords - HUF76413DKF085 MOSFET specs
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HUF76413DKF085 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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