DH10H037R Specs and Replacement
Type Designator: DH10H037R
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 227 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 952 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO220
DH10H037R substitution
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DH10H037R datasheet
dh10h037r dhf10h037r dhi10h037r dhe10h037r.pdf
DH10H037R/DHF10H037R/ DHI10H037R/DHE10H037R 120A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power MOSFETS 2 D VDS = 100V Used advanced Splite Gate technology design, provided excellent RDSON and low gate charge. Which accords with RDS = 3.7m (on) (TYP) G the RoHS standard. 1 ID = 120A 3 S 2 Features Fast Switching Low ... See More ⇒
dh10h035r dhf10h035r dhi10h035r dhe10h035r.pdf
DH10H035R/DHF10H035R/ DHI10H035R/DHE10H035R 120A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced splite gate technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 3.5m DS(on) (TYP) G standard. 1 I = 120A 3 S D 2 Features Fast switching ... See More ⇒
Detailed specifications: DH100P35, DH100P35B, DH100P35D, DH100P35E, DH100P35F, DH100P35I, DH100P40, DH10H035R, AON7408, DH116N08, DH116N08B, DH116N08D, DH116N08E, DH116N08F, DH116N08I, ZM019N03N, DH045N04
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