All MOSFET. DH10H037R Datasheet

 

DH10H037R Datasheet and Replacement


   Type Designator: DH10H037R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 227 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 90 nC
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 952 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO220
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DH10H037R Datasheet (PDF)

 ..1. Size:1160K  cn wxdh
 dh10h037r dhf10h037r dhi10h037r dhe10h037r.pdf pdf_icon

DH10H037R

DH10H037R/DHF10H037R/DHI10H037R/DHE10H037R120A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power MOSFETS2 DVDS = 100VUsed advanced Splite Gate technology design, providedexcellent RDSON and low gate charge. Which accords withRDS = 3.7m(on) (TYP)Gthe RoHS standard.1ID = 120A3 S2 Features Fast Switching Low

 7.1. Size:1098K  cn wxdh
 dh10h035r dhf10h035r dhi10h035r dhe10h035r.pdf pdf_icon

DH10H037R

DH10H035R/DHF10H035R/DHI10H035R/DHE10H035R120A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced splite gate technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 3.5mDS(on) (TYP)Gstandard.1I = 120A3 S D2 Features Fast switching

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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