DH116N08I Specs and Replacement

Type Designator: DH116N08I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 167 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 49 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 175 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm

Package: TO262

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DH116N08I datasheet

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DH116N08I

DH116N08/DH116N08F/DH116N08I/ DH116N08E/DH116N08B/DH116N08D 49A 80V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 80V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 11.6m DS(on) (TYP) standard. 1 3 S I = 49A D 2 Features Low on resi... See More ⇒

Detailed specifications: DH100P40, DH10H035R, DH10H037R, DH116N08, DH116N08B, DH116N08D, DH116N08E, DH116N08F, IRLB4132, ZM019N03N, DH045N04, DH045N04B, DH045N04D, DH045N04E, DH045N04F, DH045N04I, DH045N04P

Keywords - DH116N08I MOSFET specs

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