DH060N03R Datasheet. Specs and Replacement
Type Designator: DH060N03R 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 54 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: PDFN3X3-8L
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DH060N03R datasheet
dh060n03r.pdf
DH060N03R 54A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets used advanced 2 D V = 30V DSS trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. R = 5.3m DS(on) (TYP) G 1 2 Features I = 54A 3 S D Low switching loss Low on resistance Low gate charge Low revers... See More ⇒
dh060n07b dh060n07d.pdf
DH060N07B/DH060N07D 100A 68V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 68V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 5.7m DS(on) (TYP) standard. 1 3 S I = 100A D 2 Features Low on resistance Low gate charge Fast sw... See More ⇒
dh060n08 dh060n08f dh060n08i dh060n08e dh060n08b dh060n08d.pdf
DH060N08/DH060N08F/DH060N08I DH060N08E/DH060N08B/DH060N08D 81A 80V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 80V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 6.0m DS(on) (TYP) standard. 1 3 S I = 81A D 2 Features Low on resist... See More ⇒
Detailed specifications: DH045N04I, DH045N04P, DH045N06, DH045N06B, DH045N06D, DH045N06E, DH045N06F, DH045N06I, 12N60, DH060N07B, DH060N07D, DHE50N06FZC, DHE50N15, DHE8004, DHE80N08B22, DHE8290, DHE85N08
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History: QM3001K | P2B60AMA
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