DH060N07B Datasheet and Replacement
Type Designator: DH060N07B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 145 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 37.7 nS
Cossⓘ - Output Capacitance: 309 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO251
DH060N07B substitution
DH060N07B Datasheet (PDF)
dh060n07b dh060n07d.pdf

DH060N07B/DH060N07D100A 68V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 68VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 5.7mDS(on) (TYP)standard.13 SI = 100AD2 Features Low on resistance Low gate charge Fast sw
dh060n03r.pdf

DH060N03R54A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets used advanced2 DV = 30VDSStrench technology design, provided excellent Rdson andlow gate charge. Which accords with the RoHS standard.R = 5.3mDS(on) (TYP)G12 Features I = 54A3 S D Low switching loss Low on resistance Low gate charge Low revers
dh060n08 dh060n08f dh060n08i dh060n08e dh060n08b dh060n08d.pdf

DH060N08/DH060N08F/DH060N08IDH060N08E/DH060N08B/DH060N08D81A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 80VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 6.0mDS(on) (TYP)standard.13 SI = 81AD2 Features Low on resist
Datasheet: DH045N04P , DH045N06 , DH045N06B , DH045N06D , DH045N06E , DH045N06F , DH045N06I , DH060N03R , IRLB4132 , DH060N07D , DHE50N06FZC , DHE50N15 , DHE8004 , DHE80N08B22 , DHE8290 , DHE85N08 , DHE90N045R .
History: SFF440 | SIHF9530S | AP9973GJ-HF | CEDM7004VL
Keywords - DH060N07B MOSFET datasheet
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History: SFF440 | SIHF9530S | AP9973GJ-HF | CEDM7004VL



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