All MOSFET. DHE50N15 Datasheet

 

DHE50N15 Datasheet and Replacement


   Type Designator: DHE50N15
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 63 nC
   trⓘ - Rise Time: 55.7 nS
   Cossⓘ - Output Capacitance: 349 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO263
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DHE50N15 Datasheet (PDF)

 ..1. Size:1399K  cn wxdh
 dh50n15 dhf50n15 dhi50n15 dhe50n15.pdf pdf_icon

DHE50N15

DH50N15/DHF50N15/DHI50N15/DHE50N1550A 150V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets. used2 DV = 150VDSSadvanced trench process technology design, providedexcellent Rdson and low gate charge. Which accords with theR = 18mDS(on) (Type)GRoHS standard.1I = 50A3 S D2 Features Low on resistance Low

 8.1. Size:1704K  cn wxdh
 dh50n06fzc dhf50n06fzc dhi50n06fzc dhe50n06fzc dhb50n06fzc dhd50n06fzc.pdf pdf_icon

DHE50N15

DH50N06FZC/DHF50N06FZC/DHI50N06FZC/DHE50N06FZC/DHB50N06FZC/DHD50N06FZC50A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel Enhanced VDMOSFETs Used2 DVDSS = 60Vadvanced trench technology design, provided excellentRDSON and low gate charge. Which accords with theRDS = 18m(on) (TYP)GRoHS standard.1ID = 50A3 S2 Features Fast Switching

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

Keywords - DHE50N15 MOSFET datasheet

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