All MOSFET. DHE50N15 Datasheet

 

DHE50N15 Datasheet and Replacement


   Type Designator: DHE50N15
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 55.7 nS
   Cossⓘ - Output Capacitance: 349 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO263
 

 DHE50N15 substitution

   - MOSFET ⓘ Cross-Reference Search

 

DHE50N15 Datasheet (PDF)

 ..1. Size:1399K  cn wxdh
 dh50n15 dhf50n15 dhi50n15 dhe50n15.pdf pdf_icon

DHE50N15

DH50N15/DHF50N15/DHI50N15/DHE50N1550A 150V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets. used2 DV = 150VDSSadvanced trench process technology design, providedexcellent Rdson and low gate charge. Which accords with theR = 18mDS(on) (Type)GRoHS standard.1I = 50A3 S D2 Features Low on resistance Low

 8.1. Size:1704K  cn wxdh
 dh50n06fzc dhf50n06fzc dhi50n06fzc dhe50n06fzc dhb50n06fzc dhd50n06fzc.pdf pdf_icon

DHE50N15

DH50N06FZC/DHF50N06FZC/DHI50N06FZC/DHE50N06FZC/DHB50N06FZC/DHD50N06FZC50A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel Enhanced VDMOSFETs Used2 DVDSS = 60Vadvanced trench technology design, provided excellentRDSON and low gate charge. Which accords with theRDS = 18m(on) (TYP)GRoHS standard.1ID = 50A3 S2 Features Fast Switching

Datasheet: DH045N06D , DH045N06E , DH045N06F , DH045N06I , DH060N03R , DH060N07B , DH060N07D , DHE50N06FZC , 20N50 , DHE8004 , DHE80N08B22 , DHE8290 , DHE85N08 , DHE90N045R , DHE90N055R , DHE9Z24 , DHESJ11N65 .

History: 2SK1011-01 | 2SK888 | BUZ83 | SFF240J | RHK003N06FRA | 2SJ605-Z | WMN30N80M3

Keywords - DHE50N15 MOSFET datasheet

 DHE50N15 cross reference
 DHE50N15 equivalent finder
 DHE50N15 lookup
 DHE50N15 substitution
 DHE50N15 replacement

 

 
Back to Top

 


 
.