DHE8004 Datasheet and Replacement
Type Designator: DHE8004
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 245 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 1030 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO263
DHE8004 substitution
DHE8004 Datasheet (PDF)
dh8004 dhi8004 dhe8004 dh8004d dh8004b.pdf

DH8004/DHI8004/DHE8004/DH8004D/DH8004B180A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedadvanced trench technology design, provided excellent2 DRdson and low gate charge. Which accords with the RoHSV = 80VDSSstandard.G R = 2.8mDS(on) (Type)12 Features3 S I = 180AD Fast switching Low on resi
dh80n08b22 dhf80n08b22 dhi80n08b22 dhe80n08b22 dhb80n08b22 dhd80n08b22.pdf

DH80N08B22/DHF80N08B22/DHI80N08B22/DHE80N08B22/DHB80N08B22/DHD80N08B2280A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 80VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 6.5mDS(on) (Type)Gstandard.1I = 80A3 S D2 Features
Datasheet: DH045N06E , DH045N06F , DH045N06I , DH060N03R , DH060N07B , DH060N07D , DHE50N06FZC , DHE50N15 , IRF1407 , DHE80N08B22 , DHE8290 , DHE85N08 , DHE90N045R , DHE90N055R , DHE9Z24 , DHESJ11N65 , DHESJ13N65 .
History: TSM2328CX | VBZE30N06 | TPD65R380C | FQT3P20TF | DMP6110SVT | NCEAP25N10AG | IRF1405ZPBF
Keywords - DHE8004 MOSFET datasheet
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History: TSM2328CX | VBZE30N06 | TPD65R380C | FQT3P20TF | DMP6110SVT | NCEAP25N10AG | IRF1405ZPBF



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