All MOSFET. DHE80N08B22 Datasheet

 

DHE80N08B22 Datasheet and Replacement


   Type Designator: DHE80N08B22
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 145 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 111 nC
   trⓘ - Rise Time: 115 nS
   Cossⓘ - Output Capacitance: 292 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO263
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DHE80N08B22 Datasheet (PDF)

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DHE80N08B22

DH80N08B22/DHF80N08B22/DHI80N08B22/DHE80N08B22/DHB80N08B22/DHD80N08B2280A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 80VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 6.5mDS(on) (Type)Gstandard.1I = 80A3 S D2 Features

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 dh8004 dhi8004 dhe8004 dh8004d dh8004b.pdf pdf_icon

DHE80N08B22

DH8004/DHI8004/DHE8004/DH8004D/DH8004B180A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedadvanced trench technology design, provided excellent2 DRdson and low gate charge. Which accords with the RoHSV = 80VDSSstandard.G R = 2.8mDS(on) (Type)12 Features3 S I = 180AD Fast switching Low on resi

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: DHEZ24B31

Keywords - DHE80N08B22 MOSFET datasheet

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