DHE90N055R Specs and Replacement

Type Designator: DHE90N055R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 164 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 90 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

Cossⓘ - Output Capacitance: 790 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm

Package: TO263

DHE90N055R substitution

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DHE90N055R datasheet

 ..1. Size:1181K  cn wxdh
 dh90n055r dhf90n055r dhi90n055r dhe90n055r.pdf pdf_icon

DHE90N055R

DH90N055R/DHF90N055R/ DHI90N055R/DHE90N055R 120A 90V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 90V DSS advanced splite gate technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 5.5m DS(on) (TYP) G standard. 1 I = 120A 3 S D 2 Features Fast switching Lo... See More ⇒

 7.1. Size:1390K  cn wxdh
 dh90n045r dhf90n045r dhi90n045r dhe90n045r dhb90n045r dhd90n045r.pdf pdf_icon

DHE90N055R

DH90N045R/DHF90N045R/DHI90N045R DHE90N045R/DHB90N045R/DHD90N045R 120A 98V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 98V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.6m DS(on) (TYP) the RoHS standard. 1 3 S I = 120A D 2 Feature... See More ⇒

Detailed specifications: DH060N07D, DHE50N06FZC, DHE50N15, DHE8004, DHE80N08B22, DHE8290, DHE85N08, DHE90N045R, IRFP250, DHE9Z24, DHESJ11N65, DHESJ13N65, DHESJ17N65, DHEZ24B31, DHF035N04, DHF100N03B13, DHF10H035R

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