DHE9Z24 Specs and Replacement

Type Designator: DHE9Z24

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 43 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 42 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: TO263

DHE9Z24 substitution

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DHE9Z24 datasheet

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 dh9z24 dhf9z24 dhi9z24 dhe9z24 dhb9z24 dhd9z24.pdf pdf_icon

DHE9Z24

DH9Z24/DHF9Z24/DHI9Z24 DHE9Z24/DHB9Z24/DHD9Z24 20A 60V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhanced vdmosfets, used advanced V = -60V DSS trench technology and design, provide to excellent Rdson with low gate charge. Which accords with the R =58.5m DS(on) (TYP) RoHS standard. I = -20A D 2 Features Fast switching Low on resistance ... See More ⇒

Detailed specifications: DHE50N06FZC, DHE50N15, DHE8004, DHE80N08B22, DHE8290, DHE85N08, DHE90N045R, DHE90N055R, IRF1407, DHESJ11N65, DHESJ13N65, DHESJ17N65, DHEZ24B31, DHF035N04, DHF100N03B13, DHF10H035R, DHS020N04D

Keywords - DHE9Z24 MOSFET specs

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