All MOSFET. DHE9Z24 Datasheet

 

DHE9Z24 Datasheet and Replacement


   Type Designator: DHE9Z24
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO263
 

 DHE9Z24 substitution

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DHE9Z24 Datasheet (PDF)

 ..1. Size:1095K  cn wxdh
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DHE9Z24

DH9Z24/DHF9Z24/DHI9Z24DHE9Z24/DHB9Z24/DHD9Z2420A 60V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhanced vdmosfets, used advancedV = -60VDSStrench technology and design, provide to excellentRdson with low gate charge. Which accords with theR =58.5mDS(on) (TYP)RoHS standard.I = -20AD2 Features Fast switching Low on resistance

Datasheet: DHE50N06FZC , DHE50N15 , DHE8004 , DHE80N08B22 , DHE8290 , DHE85N08 , DHE90N045R , DHE90N055R , IRF1407 , DHESJ11N65 , DHESJ13N65 , DHESJ17N65 , DHEZ24B31 , DHF035N04 , DHF100N03B13 , DHF10H035R , DHS020N04D .

Keywords - DHE9Z24 MOSFET datasheet

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