DHEZ24B31 Specs and Replacement

Type Designator: DHEZ24B31

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 92.9 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: TO263

DHEZ24B31 substitution

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DHEZ24B31 datasheet

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DHEZ24B31

DHZ24B31/DHFZ24B31/DHIZ24B31/ DHEZ24B31/DHBZ24B31/DHDZ24B31 30A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 60V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 24m DS(on) (TYP) standard. 1 3 S I = 30A D 2 Features Low on resist... See More ⇒

Detailed specifications: DHE8290, DHE85N08, DHE90N045R, DHE90N055R, DHE9Z24, DHESJ11N65, DHESJ13N65, DHESJ17N65, RFP50N06, DHF035N04, DHF100N03B13, DHF10H035R, DHS020N04D, DHS020N04E, DHS020N04F, DHS020N04I, DHS020N04P

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