DHF035N04 Datasheet. Specs and Replacement
Type Designator: DHF035N04 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 155 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 68 nS
Cossⓘ - Output Capacitance: 690 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO220F
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DHF035N04 datasheet
dh035n04 dhf035n04 dhi035n04 dhe035n04 dhb035n04 dhd035n04.pdf
DH035N04/DHF035N04/DHI035N04/ DHE035N04/DHB035N04/DHD035N04 155A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets used advanced 2 D V = 40V DSS trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. R = 2.3m DS(on) (TYP) G 1 2 Features I = 155A D 3 S Fast switching High... See More ⇒
Detailed specifications: DHE85N08, DHE90N045R, DHE90N055R, DHE9Z24, DHESJ11N65, DHESJ13N65, DHESJ17N65, DHEZ24B31, STF13NM60N, DHF100N03B13, DHF10H035R, DHS020N04D, DHS020N04E, DHS020N04F, DHS020N04I, DHS020N04P, DHS020N88
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History: APT8075BVFRG | NCE3401BY | DHS020N04E | CI47N65 | FDB86135 | FK7SM-12 | NTGD3148NT1G
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