All MOSFET. DHS020N04I Datasheet

 

DHS020N04I Datasheet and Replacement


   Type Designator: DHS020N04I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 95.6 nS
   Cossⓘ - Output Capacitance: 2180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm
   Package: TO262
 

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DHS020N04I Datasheet (PDF)

 ..1. Size:999K  cn wxdh
 dhs020n04 dhs020n04f dhs020n04i dhs020n04e.pdf pdf_icon

DHS020N04I

DHS020N04/DHS020N04F/DHS020N04I/DHS020N04E180A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced Splite gate technology design, providedexcellent Rdson and low gate charge. Which accords with GR = 1.7mDS(on) (TYP)1the RoHS standard.3 SI = 180AD2 Features Fast switching Lo

 5.1. Size:879K  cn wxdh
 dhs020n04p.pdf pdf_icon

DHS020N04I

DHS020N04P170A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 1.3mDS(on) (TYP)the RoHS standard.13 SI = 170AD2 Features Low on resistance Low gate charge Fast

 5.2. Size:810K  cn wxdh
 dhs020n04b dhs020n04d.pdf pdf_icon

DHS020N04I

DHS020N04B/DHS020N04D180A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced Splite gate technology design, providedexcellent Rdson and low gate charge. Which accords with GR = 1.7mDS(on) (TYP)1the RoHS standard.3 SI = 180AD2 Features Fast switching Low on resistance Lo

 7.1. Size:977K  cn wxdh
 dhs020n88 dhs020n88e dhs020n88i.pdf pdf_icon

DHS020N04I

DHS020N88/DHS020N88E/DHS020N88I180A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedV = 85VDSSadvanced splite gate trench technology design, provided2 DR = 1.9mTO-220&TO-262DS(on) (TYP)excellent Rdson and low gate charge. Which accords withthe RoHS standard.R = 1.6mTO-263DS(on) (TYP)G1I

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Datasheet: DHESJ17N65 , DHEZ24B31 , DHF035N04 , DHF100N03B13 , DHF10H035R , DHS020N04D , DHS020N04E , DHS020N04F , IRFZ24N , DHS020N04P , DHS020N88 , DHS020N88E , DHS020N88I , DHS020N88U , DHS021N04 , DHS021N04B , DHS021N04D .

History: GSM8988W | NCEP3085EG | STF28N60M2 | MTN2342N3 | SI1551DL | SI2369DS-T1 | BL15N50-P

Keywords - DHS020N04I MOSFET datasheet

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