DHS020N04P PDF Specs and Replacement
Type Designator: DHS020N04P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 170 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 95.6 nS
Cossⓘ - Output Capacitance: 2180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
Package: DFN5X6-8L
DHS020N04P substitution
DHS020N04P PDF Specs
dhs020n04p.pdf
DHS020N04P 170A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 1.3m DS(on) (TYP) the RoHS standard. 1 3 S I = 170A D 2 Features Low on resistance Low gate charge Fast... See More ⇒
dhs020n04b dhs020n04d.pdf
DHS020N04B/DHS020N04D 180A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with G R = 1.7m DS(on) (TYP) 1 the RoHS standard. 3 S I = 180A D 2 Features Fast switching Low on resistance Lo... See More ⇒
dhs020n04 dhs020n04f dhs020n04i dhs020n04e.pdf
DHS020N04/DHS020N04F/ DHS020N04I/DHS020N04E 180A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with G R = 1.7m DS(on) (TYP) 1 the RoHS standard. 3 S I = 180A D 2 Features Fast switching Lo... See More ⇒
Detailed specifications: DHEZ24B31 , DHF035N04 , DHF100N03B13 , DHF10H035R , DHS020N04D , DHS020N04E , DHS020N04F , DHS020N04I , IRFZ24N , DHS020N88 , DHS020N88E , DHS020N88I , DHS020N88U , DHS021N04 , DHS021N04B , DHS021N04D , DHS021N04E .
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