All MOSFET. DHS020N88E Datasheet

 

DHS020N88E Datasheet and Replacement


   Type Designator: DHS020N88E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 180 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 185 nC
   trⓘ - Rise Time: 146 nS
   Cossⓘ - Output Capacitance: 2369 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: TO263
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DHS020N88E Datasheet (PDF)

 ..1. Size:977K  cn wxdh
 dhs020n88 dhs020n88e dhs020n88i.pdf pdf_icon

DHS020N88E

DHS020N88/DHS020N88E/DHS020N88I180A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedV = 85VDSSadvanced splite gate trench technology design, provided2 DR = 1.9mTO-220&TO-262DS(on) (TYP)excellent Rdson and low gate charge. Which accords withthe RoHS standard.R = 1.6mTO-263DS(on) (TYP)G1I

 5.1. Size:909K  cn wxdh
 dhs020n88u.pdf pdf_icon

DHS020N88E

DHS020N88U285A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV =85VDSSadvanced Splite gate technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 1.4mDS(on) (TYP)the RoHS standard. 13 SI =285AD2 Features Low on resistance Low gate charge Fast switching

 7.1. Size:879K  cn wxdh
 dhs020n04p.pdf pdf_icon

DHS020N88E

DHS020N04P170A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 1.3mDS(on) (TYP)the RoHS standard.13 SI = 170AD2 Features Low on resistance Low gate charge Fast

 7.2. Size:810K  cn wxdh
 dhs020n04b dhs020n04d.pdf pdf_icon

DHS020N88E

DHS020N04B/DHS020N04D180A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced Splite gate technology design, providedexcellent Rdson and low gate charge. Which accords with GR = 1.7mDS(on) (TYP)1the RoHS standard.3 SI = 180AD2 Features Fast switching Low on resistance Lo

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