DHS022N06E Datasheet. Specs and Replacement
Type Designator: DHS022N06E 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 46.7 nS
Cossⓘ - Output Capacitance: 1822 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
Package: TO263
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DHS022N06E datasheet
..1. Size:868K cn wxdh
dhs022n06 dhs022n06e.pdf 
DHS022N06/DHS022N06E 180A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used V = 60V DSS advanced Splite gate technology design, provided 2 D R = 2.3m To-220 DS(on) (TYP) excellent Rdson and low gate charge. Which accords with the RoHS standard. R = 2.0m To-263 DS(on) (TYP) G 1 I (Silicon limit) = 200A D ... See More ⇒
9.1. Size:871K cn wxdh
dhs025n06 dhs025n06e.pdf
DHS025N06/DHS025N06E 180A 60V N-channel Enhancement Mode Power MOSFET 1 Description The N-channel enhancement mode power mosfets used 2 D V =60V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with R =2.5 m TO-220 DS(on) (TYP) G the RoHS standard. 1 R =2.2 m TO-263 DS(on) (TYP) 3 S 2 Features I = ... See More ⇒
9.3. Size:872K cn wxdh
dhs021n04b dhs021n04d.pdf
DHS021N04B&DHS021N04D 120A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used V = 40V DSS advanced splite gate trench technology design, provided 2 D excellent Rdson and low gate charge. Which accords with R = 2m DS(on) (TYP) the RoHS standard. G 1 I Silicon limit = 170A D 3 S 2 Features I Package limit 12... See More ⇒
9.4. Size:1358K cn wxdh
dhs025n88 dhs025n88f dhs025n88i dhs025n88e dhs025n88d dhs025n88b.pdf
DHS025N88/DHS025N88F/DHS025N88I DHS025N88E/DHS025N88D/DHS025N88B 205A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 2.5m DS(on) (TYP) the RoHS standard. 1 3 S I = 205A D 2 Feature... See More ⇒
9.5. Size:1171K cn wxdh
dhs025n10 dhs025n10e dhs025n10d dhs025n10b.pdf
DHS025N10/DHS025N10E DHS025N10D/DHS025N10B 240A 100V N-channel Enhancement Mode Power MOSFET 1 Description The N-channel enhancement mode power mosfets used 2 D V =100V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 2.8m DS(on) (TYP) the RoHS standard. 1 3 S I = 240A D 2 Features Low on resistanc... See More ⇒
9.6. Size:875K cn wxdh
dhs021n04 dhs021n04e.pdf
DHS021N04&DHS021N04E 180A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced splite gate trench technology design, provided R = 2.1m TO-220 DS(on) (TYP) excellent Rdson and low gate charge. Which accords with G the RoHS standard. 1 R = 1.8m TO-263 DS(on) (TYP) 3 S I = 180A D 2... See More ⇒
9.7. Size:879K cn wxdh
dhs020n04p.pdf
DHS020N04P 170A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 1.3m DS(on) (TYP) the RoHS standard. 1 3 S I = 170A D 2 Features Low on resistance Low gate charge Fast... See More ⇒
9.8. Size:906K cn wxdh
dhs025n10u.pdf
DHS025N10U 180A 100V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power MOSFET 2 D V =100V DSS utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same G R = 2.2m DS(on) (TYP) time. Which accords with the RoHS standard. 1 3 S I =180A D 2 Features Low on resistance Low gate ... See More ⇒
9.9. Size:909K cn wxdh
dhs020n88u.pdf
DHS020N88U 285A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V =85V DSS advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with G R = 1.4m DS(on) (TYP) the RoHS standard. 1 3 S I =285A D 2 Features Low on resistance Low gate charge Fast switching... See More ⇒
9.10. Size:794K cn wxdh
dhs021n04p.pdf
DHS021N04P 100A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used V = 40V DSS advanced splite gate trench technology design, provided 2 D excellent Rdson and low gate charge. Which accords with R = 1.4m DS(on) (TYP) the RoHS standard. G 1 I Silicon limit = 170A D 3 S 2 Features I Package limit 100A = D ... See More ⇒
9.11. Size:810K cn wxdh
dhs020n04b dhs020n04d.pdf
DHS020N04B/DHS020N04D 180A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with G R = 1.7m DS(on) (TYP) 1 the RoHS standard. 3 S I = 180A D 2 Features Fast switching Low on resistance Lo... See More ⇒
9.12. Size:999K cn wxdh
dhs020n04 dhs020n04f dhs020n04i dhs020n04e.pdf
DHS020N04/DHS020N04F/ DHS020N04I/DHS020N04E 180A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with G R = 1.7m DS(on) (TYP) 1 the RoHS standard. 3 S I = 180A D 2 Features Fast switching Lo... See More ⇒
Detailed specifications: DHS020N88I, DHS020N88U, DHS021N04, DHS021N04B, DHS021N04D, DHS021N04E, DHS021N04P, DHS022N06, AO4468, DHB8290, DHB90N03B17, DHB90N045R, DHB9Z24, DHBSJ11N65, DHBSJ13N65, DHBSJ5N65, DHBSJ7N65
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