All MOSFET. DHB90N045R Datasheet

 

DHB90N045R Datasheet and Replacement


   Type Designator: DHB90N045R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 98 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 64 nC
   trⓘ - Rise Time: 76 nS
   Cossⓘ - Output Capacitance: 652 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO251
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DHB90N045R Datasheet (PDF)

 ..1. Size:1390K  cn wxdh
 dh90n045r dhf90n045r dhi90n045r dhe90n045r dhb90n045r dhd90n045r.pdf pdf_icon

DHB90N045R

DH90N045R/DHF90N045R/DHI90N045RDHE90N045R/DHB90N045R/DHD90N045R120A 98V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 98VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 4.6mDS(on) (TYP)the RoHS standard.13 SI = 120AD2 Feature

 7.1. Size:1086K  cn wxdh
 dhb90n03b17 dhd90n03b17.pdf pdf_icon

DHB90N045R

DHB90N03B17/DHD90N03B1790A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 4.0mDS(on) (TYP)standard.13 SI = 90AD2 Features Low on resistance Low gate charge Fast

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Keywords - DHB90N045R MOSFET datasheet

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