DHF10H037R PDF and Equivalents Search

 

DHF10H037R PDF Specs and Replacement


   Type Designator: DHF10H037R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 952 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO220F
 

 DHF10H037R substitution

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DHF10H037R PDF Specs

 ..1. Size:1160K  cn wxdh
 dh10h037r dhf10h037r dhi10h037r dhe10h037r.pdf pdf_icon

DHF10H037R

DH10H037R/DHF10H037R/ DHI10H037R/DHE10H037R 120A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power MOSFETS 2 D VDS = 100V Used advanced Splite Gate technology design, provided excellent RDSON and low gate charge. Which accords with RDS = 3.7m (on) (TYP) G the RoHS standard. 1 ID = 120A 3 S 2 Features Fast Switching Low ... See More ⇒

 6.1. Size:1098K  cn wxdh
 dh10h035r dhf10h035r dhi10h035r dhe10h035r.pdf pdf_icon

DHF10H037R

DH10H035R/DHF10H035R/ DHI10H035R/DHE10H035R 120A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced splite gate technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 3.5m DS(on) (TYP) G standard. 1 I = 120A 3 S D 2 Features Fast switching ... See More ⇒

 9.1. Size:1507K  cn wxdh
 dh100n03b13 dhf100n03b13 dhi100n03b13 dhe100n03b13 dhb100n03b13 dhd100n03b13.pdf pdf_icon

DHF10H037R

DH100N03B13/DHF100N03B13/DHI100N03B13/ DHE100N03B13/DHB100N03B13/DHD100N03B13 100A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 3.3m DS(on) (TYP) standard. 1 3 S I = 100A D 2 Featur... See More ⇒

Detailed specifications: DHBZ24B31 , DHD015N06 , DHD035N04 , DHD100N03B13 , DHD16N06 , DHD3205A , DHD3N90 , DHD50N03 , IRF3205 , DHF16N06 , DHF3205A , DHF3N90 , DHF50N06FZC , DHF50N15 , DHF80N08B22 , DHF8290 , DHF85N08 .

Keywords - DHF10H037R MOSFET specs

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