DHF3N90 Datasheet. Specs and Replacement

Type Designator: DHF3N90  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 44 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm

Package: TO220F

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DHF3N90 datasheet

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DHF3N90

DH3N90/DHF3N90/DHI3N90/ DHE3N90/DHB3N90/DHD3N90 3A 900V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the 2 D V = 900V DSS self-aligned planar technology which reduce the conduction loss, improve switching performance and R = 4.7 DS(on) (TYP) G enhance the avalanche energy. Which accords with the 1 RoHS standard. I = 3... See More ⇒

Detailed specifications: DHD100N03B13, DHD16N06, DHD3205A, DHD3N90, DHD50N03, DHF10H037R, DHF16N06, DHF3205A, 20N60, DHF50N06FZC, DHF50N15, DHF80N08B22, DHF8290, DHF85N08, DHF90N045R, DHF90N055R, DHF9Z24

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