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DHF3N90 PDF Specs and Replacement


   Type Designator: DHF3N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 44 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm
   Package: TO220F
 

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DHF3N90 PDF Specs

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DHF3N90

DH3N90/DHF3N90/DHI3N90/ DHE3N90/DHB3N90/DHD3N90 3A 900V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the 2 D V = 900V DSS self-aligned planar technology which reduce the conduction loss, improve switching performance and R = 4.7 DS(on) (TYP) G enhance the avalanche energy. Which accords with the 1 RoHS standard. I = 3... See More ⇒

Detailed specifications: DHD100N03B13 , DHD16N06 , DHD3205A , DHD3N90 , DHD50N03 , DHF10H037R , DHF16N06 , DHF3205A , 20N60 , DHF50N06FZC , DHF50N15 , DHF80N08B22 , DHF8290 , DHF85N08 , DHF90N045R , DHF90N055R , DHF9Z24 .

Keywords - DHF3N90 MOSFET specs

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