DH060N08 Datasheet. Specs and Replacement
Type Designator: DH060N08 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 81 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 220 nS
Cossⓘ - Output Capacitance: 320 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
Package: TO220
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DH060N08 datasheet
dh060n08 dh060n08f dh060n08i dh060n08e dh060n08b dh060n08d.pdf
DH060N08/DH060N08F/DH060N08I DH060N08E/DH060N08B/DH060N08D 81A 80V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 80V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 6.0m DS(on) (TYP) standard. 1 3 S I = 81A D 2 Features Low on resist... See More ⇒
dh060n07b dh060n07d.pdf
DH060N07B/DH060N07D 100A 68V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 68V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 5.7m DS(on) (TYP) standard. 1 3 S I = 100A D 2 Features Low on resistance Low gate charge Fast sw... See More ⇒
dh060n03r.pdf
DH060N03R 54A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets used advanced 2 D V = 30V DSS trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. R = 5.3m DS(on) (TYP) G 1 2 Features I = 54A 3 S D Low switching loss Low on resistance Low gate charge Low revers... See More ⇒
Detailed specifications: DHF85N08, DHF90N045R, DHF90N055R, DHF9Z24, DHFSJ11N65, DHFSJ13N65, DHFSJ17N65, DHFSJ5N65, AON6414A, DH060N08B, DH060N08D, DH060N08E, DH060N08F, DH060N08I, DH065N04, DH065N04B, DH065N04D
Keywords - DH060N08 MOSFET specs
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