DH060N08B Datasheet and Replacement
Type Designator: DH060N08B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 81 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 120 nC
trⓘ - Rise Time: 220 nS
Cossⓘ - Output Capacitance: 320 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
Package: TO251
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DH060N08B Datasheet (PDF)
dh060n08 dh060n08f dh060n08i dh060n08e dh060n08b dh060n08d.pdf

DH060N08/DH060N08F/DH060N08IDH060N08E/DH060N08B/DH060N08D81A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 80VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 6.0mDS(on) (TYP)standard.13 SI = 81AD2 Features Low on resist
dh060n07b dh060n07d.pdf

DH060N07B/DH060N07D100A 68V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 68VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 5.7mDS(on) (TYP)standard.13 SI = 100AD2 Features Low on resistance Low gate charge Fast sw
dh060n03r.pdf

DH060N03R54A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets used advanced2 DV = 30VDSStrench technology design, provided excellent Rdson andlow gate charge. Which accords with the RoHS standard.R = 5.3mDS(on) (TYP)G12 Features I = 54A3 S D Low switching loss Low on resistance Low gate charge Low revers
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: DH065N04I
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History: DH065N04I



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