All MOSFET. DH065N04D Datasheet

 

DH065N04D Datasheet and Replacement


   Type Designator: DH065N04D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 38 nC
   trⓘ - Rise Time: 85 nS
   Cossⓘ - Output Capacitance: 178 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
   Package: TO252
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DH065N04D Datasheet (PDF)

 ..1. Size:1185K  cn wxdh
 dh065n04 dh065n04f dh065n04i dh065n04e dh065n04b dh065n04d.pdf pdf_icon

DH065N04D

DH065N04/DH065N04FDH065N04I/DH065N04E/DH065N04B/DH065N04D80A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 6.0mDS(on) (TYP)standard.13 SI = 80AD2 Features Low on resist

 6.1. Size:677K  cn wxdh
 dh065n04p.pdf pdf_icon

DH065N04D

DH065N04P60A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThe N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 6.3mDS(on) (TYP)standard.13 SI = 60AD2 Features Low on resistance Low gate charge Fast switching L

 7.1. Size:1036K  cn wxdh
 dh065n06 dh065n06e.pdf pdf_icon

DH065N04D

DH065N06/DH065N06E120A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedV = 60VDSS2 Dadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 5.2mTO-220DS(on) (TYP)standard. G1R = 5mTO-263DS(on) (TYP)3 S2 FeaturesI = 120AD Low

 7.2. Size:855K  cn wxdh
 dh065n06d.pdf pdf_icon

DH065N04D

DH065N06D110A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedV = 60V2 D DSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 5mDS(on) (TYP)standard. G1I = 110AD3 S2 Features Low on resistance Low gate charge Fast switching L

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