All MOSFET. FDP083N15A Datasheet

 

FDP083N15A MOSFET. Datasheet pdf. Equivalent

Type Designator: FDP083N15A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 294 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 117 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.0083 Ohm

Package: TO220

FDP083N15A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDP083N15A Datasheet (PDF)

1.1. fdp083n15a.pdf Size:766K _fairchild_semi

FDP083N15A
FDP083N15A

November 2013 FDP083N15A N-Channel PowerTrench® MOSFET 150 V, 117 A, 8.3 mΩ Features Description • RDS(on) = 6.85 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor’s PowerTrench® process that has been tailored to mini- • Fast Switching Speed mize the on-state resistance while maintaining superior switching performance. • L

1.2. fdp083n15a f102.pdf Size:399K _fairchild_semi

FDP083N15A
FDP083N15A

March 2013 FDP083N15A _F102 N-Channel PowerTrench® MOSFET 150 V, 117 A, 8.3 mΩ Features Description • RDS(on) = 6.85 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has • Fast Switching Speed been tailored to minimize the on-state resistance while maintain- ing superior switching perfo

 5.1. fdp085n10a f102.pdf Size:320K _fairchild_semi

FDP083N15A
FDP083N15A

May 2011 FDP085N10A_F102 N-Channel PowerTrench® MOSFET 100V, 96A, 8.5mΩ Features General Description • RDS(on) = 7.35mΩ ( Typ.)@ VGS = 10V, ID = 96A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been • Fast Switching Speed especially tailored to minimize the on-state resistance and yet maintain superior switching perf

5.2. fdp085n10a.pdf Size:662K _fairchild_semi

FDP083N15A
FDP083N15A

November 2013 FDP085N10A N-Channel PowerTrench® MOSFET 100 V, 96 A, 8.5 mΩ Features Description • RDS(on) = 7.35 mΩ (Typ.) @ VGS = 10 V, ID = 96 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor’s PowerTrench® process that has been tailored to mini- • Fast Switching Speed mize the on-state resistance while maintaining superior switching performance. • Low

Datasheet: FQT3P20 , FQT4N20L , FDD14AN06L_F085 , FQT4N25 , FQT5P10 , FQT7N10 , FDB14AN06L_F085 , FQT7N10L , IRF540 , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , FQU13N10L , FDB86102LZ .

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