FDP083N15A - описание и поиск аналогов

November 2013 FDP083N15A N-Channel PowerTrench MOSFET 150 V, 117 A, 8.3 m Features Description RDS(on) = 6.85 m ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s PowerTrench process that has been tailored to mini- Fast Switching Speed mize the on-state resistance while maintaining superior switching performance. L

March 2013 FDP083N15A _F102 N-Channel PowerTrench MOSFET 150 V, 117 A, 8.3 m Features Description RDS(on) = 6.85 m ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Fast Switching Speed been tailored to minimize the on-state resistance while maintain- ing superior switching perfo

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

November 2013 FDP085N10A N-Channel PowerTrench MOSFET 100 V, 96 A, 8.5 m Features Description RDS(on) = 7.35 m (Typ.) @ VGS = 10 V, ID = 96 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s PowerTrench process that has been tailored to mini- Fast Switching Speed mize the on-state resistance while maintaining superior switching performance. Low

May 2011 FDP085N10A_F102 N-Channel PowerTrench MOSFET 100V, 96A, 8.5m Features General Description RDS(on) = 7.35m ( Typ.)@ VGS = 10V, ID = 96A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has been Fast Switching Speed especially tailored to minimize the on-state resistance and yet maintain superior switching perf

FDP085N10A N-Channel PowerTrench MOSFET 100 V, 96 A, 8.5 m Features Description This N-Channel MOSFET is produced using ON Semiconductor's RDS(on) = 7.35 m (Typ.) @ VGS = 10 V, ID = 96 A PowerTrench process that has been tailored to minimize the Fast Switching Speed on-state resistance while maintaining superior switching performance. Low Gate Charge, QG = 31 nC

isc N-Channel MOSFET Transistor FDP085N10A FEATURES Static drain-source on-resistance RDS(on) 8.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION DC to DC converters synchronous rectification for telecommunication PSU AC motor drives and uninterruptib