DHISJ11N65 Datasheet and Replacement
Type Designator: DHISJ11N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 25 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO262
DHISJ11N65 substitution
DHISJ11N65 Datasheet (PDF)
dhsj11n65 dhfsj11n65 dhisj11n65 dhesj11n65 dhbsj11n65 dhdsj11n65.pdf

DHSJ11N65/DHFSJ11N65/DHISJ11N65/DHESJ11N65/DHBSJ11N65/DHDSJ11N6511A 650V N-channel Super Junction Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is using advancedsuper junction technology and design to provide excellent 2 DV = 650VDSSRds(on) with low gate charge. Which accords with theR = 0.33DS(on) (TYP)RoHS standard. G1I = 11A3 S D2 Features
dhsj13n65 dhfsj13n65 dhisj13n65 dhesj13n65 dhbsj13n65 dhdsj13n65.pdf

DHSJ13N65/DHFSJ13N65/DHISJ13N65DHESJ13N65/DHBSJ13N65/DHDSJ13N6513A 650V N-channel Super Junction Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is using advanced2 DV = 650VDSSsuper junction technology and design to provide excellentRdson with low gate charge. Which accords with theR = 0.28DS(on) (TYP)GRoHS standard.1I = 13A3 S D2 Features F
dhsj17n65 dhfsj17n65 dhisj17n65 dhesj17n65.pdf

DHSJ17N65/DHFSJ17N65DHISJ17N65/DHESJ17N6517A 650V N-channel Super Junction Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is using advancedsuper junction technology and design to provide excellent 2 DV = 650VDSSRds(on) with low gate charge. Which accords with theR = 185mDS(on) (TYP)RoHS standard. G1I = 17A3 S D2 Features Fast switching Low
Datasheet: DH065N04I , DH065N04P , DH065N06 , DH065N06D , DH065N06E , DHI90N045R , DHI90N055R , DHI9Z24 , AO3400 , DHISJ13N65 , DHISJ17N65 , DHIZ24B31 , DHP035N04 , DHP150N03 , DHP50P04 , DHS008N04P , DHS010N04U .
Keywords - DHISJ11N65 MOSFET datasheet
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