DHISJ11N65 PDF and Equivalents Search

 

DHISJ11N65 Specs and Replacement


   Type Designator: DHISJ11N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO262
 

 DHISJ11N65 substitution

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DHISJ11N65 datasheet

 ..1. Size:1552K  cn wxdh
dhsj11n65 dhfsj11n65 dhisj11n65 dhesj11n65 dhbsj11n65 dhdsj11n65.pdf pdf_icon

DHISJ11N65

DHSJ11N65/DHFSJ11N65/DHISJ11N65/ DHESJ11N65/DHBSJ11N65/DHDSJ11N65 11A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced vdmosfets, is using advanced super junction technology and design to provide excellent 2 D V = 650V DSS Rds(on) with low gate charge. Which accords with the R = 0.33 DS(on) (TYP) RoHS standard. G 1 I = 11A 3 S D 2 Features ... See More ⇒

 8.1. Size:1649K  cn wxdh
dhsj13n65 dhfsj13n65 dhisj13n65 dhesj13n65 dhbsj13n65 dhdsj13n65.pdf pdf_icon

DHISJ11N65

DHSJ13N65/DHFSJ13N65/DHISJ13N65 DHESJ13N65/DHBSJ13N65/DHDSJ13N65 13A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced vdmosfets, is using advanced 2 D V = 650V DSS super junction technology and design to provide excellent Rdson with low gate charge. Which accords with the R = 0.28 DS(on) (TYP) G RoHS standard. 1 I = 13A 3 S D 2 Features F... See More ⇒

 8.2. Size:1360K  cn wxdh
dhsj17n65 dhfsj17n65 dhisj17n65 dhesj17n65.pdf pdf_icon

DHISJ11N65

DHSJ17N65/DHFSJ17N65 DHISJ17N65/DHESJ17N65 17A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced vdmosfets, is using advanced super junction technology and design to provide excellent 2 D V = 650V DSS Rds(on) with low gate charge. Which accords with the R = 185m DS(on) (TYP) RoHS standard. G 1 I = 17A 3 S D 2 Features Fast switching Low... See More ⇒

Detailed specifications: DH065N04I , DH065N04P , DH065N06 , DH065N06D , DH065N06E , DHI90N045R , DHI90N055R , DHI9Z24 , AO3401 , DHISJ13N65 , DHISJ17N65 , DHIZ24B31 , DHP035N04 , DHP150N03 , DHP50P04 , DHS008N04P , DHS010N04U .

History: KQB27P06 | 8N60KL-TF1-T

Keywords - DHISJ11N65 MOSFET specs

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