All MOSFET. DHIZ24B31 Datasheet

 

DHIZ24B31 Datasheet and Replacement


   Type Designator: DHIZ24B31
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 22.4 nC
   tr ⓘ - Rise Time: 92.9 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO262
 

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DHIZ24B31 Datasheet (PDF)

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DHIZ24B31

DHZ24B31/DHFZ24B31/DHIZ24B31/DHEZ24B31/DHBZ24B31/DHDZ24B3130A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 60VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 24mDS(on) (TYP)standard.13 SI = 30AD2 Features Low on resist

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