DHS015N06 MOSFET Datasheet: N-Ch, 60V, 180A. Full specification with pinout and replacement list

DHS015N06 Specs and Replacement

   Type Designator: DHS015N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 227 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 2920 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: TO220

DHS015N06 substitution

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DHS015N06 datasheet

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dhs015n06 dhs015n06e.pdf pdf_icon

DHS015N06&DHS015N06E 180A 60V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power MOSFET V = 60V DS 2 D utilizes advanced Split Gate Trench technology, which R = 1.8m TO-220 DS(on) (TYP) provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard. G R = 1.6m TO-263 DS(on) (TYP) 1 I ... See More ⇒

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dhs010n04u.pdf pdf_icon

DHS010N04U 40V/0.8m /300A N-MOSFET Features Key Parameters Low on resistance VDS 40V Low reverse transfer capacitances RDS(on)typ. 0.8m 100% single pulse avalanche energy test ID Silicon limit 426A 100% VDS test ID Package limit 300A Pb-Free plating / Halogen-Free / RoHS compliant Ciss@10V 9864pF Qgd 26nC Applications Power switching applications... See More ⇒

Detailed specifications: DHISJ13N65 , DHISJ17N65 , DHIZ24B31 , DHP035N04 , DHP150N03 , DHP50P04 , DHS008N04P , DHS010N04U , 12N60 , DHS015N06E , DHS020N04 , DHS020N04B , DH081N03E , DH081N03F , DH081N03I , DH850N10I , DH85N08 .