All MOSFET. DHS015N06 Datasheet

 

DHS015N06 Datasheet and Replacement


   Type Designator: DHS015N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 227 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 136 nC
   tr ⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 2920 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: TO220
 

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DHS015N06 Datasheet (PDF)

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 dhs015n06 dhs015n06e.pdf pdf_icon

DHS015N06

DHS015N06&DHS015N06E180A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFETV = 60VDS2 Dutilizes advanced Split Gate Trench technology, whichR = 1.8mTO-220DS(on) (TYP)provides excellent Rdson and low Gate charge at the sametime. Which accords with the RoHS standard.GR = 1.6mTO-263DS(on) (TYP)1I

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 dhs010n04u.pdf pdf_icon

DHS015N06

DHS010N04U40V/0.8m/300A N-MOSFETFeatures Key Parameters Low on resistance VDS 40V Low reverse transfer capacitances RDS(on)typ. 0.8m 100% single pulse avalanche energy test IDSilicon limit 426A 100% VDS test IDPackage limit 300A Pb-Free plating / Halogen-Free / RoHS compliant Ciss@10V 9864pFQgd 26nCApplications Power switching applications

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