DH081N03F Datasheet. Specs and Replacement
Type Designator: DH081N03F 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 91 nS
Cossⓘ - Output Capacitance: 125 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO220F
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DH081N03F datasheet
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DH081N03/DH081N03F/DH081N03I DH081N03E/DH081N03B/DH081N03D 60A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V =30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R =8.1m DS(on) (TYP) standard. 1 3 S I =60A D 2 Features Low on resistanc... See More ⇒
Detailed specifications: DHP50P04, DHS008N04P, DHS010N04U, DHS015N06, DHS015N06E, DHS020N04, DHS020N04B, DH081N03E, IRF530, DH081N03I, DH850N10I, DH85N08, DH90N045R, DH90N055R, DH9Z24, DHB035N04, DHB100N03B13
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