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DH081N03I Spec and Replacement


   Type Designator: DH081N03I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 91 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO262

 DH081N03I Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DH081N03I Specs

 ..1. Size:1204K  cn wxdh
 dh081n03 dh081n03f dh081n03i dh081n03e dh081n03b dh081n03d.pdf pdf_icon

DH081N03I

DH081N03/DH081N03F/DH081N03I DH081N03E/DH081N03B/DH081N03D 60A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V =30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R =8.1m DS(on) (TYP) standard. 1 3 S I =60A D 2 Features Low on resistanc... See More ⇒

Detailed specifications: DHS008N04P , DHS010N04U , DHS015N06 , DHS015N06E , DHS020N04 , DHS020N04B , DH081N03E , DH081N03F , CS150N03A8 , DH850N10I , DH85N08 , DH90N045R , DH90N055R , DH9Z24 , DHB035N04 , DHB100N03B13 , DHB16N06 .

History: DHB035N04

Keywords - DH081N03I MOSFET specs

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