DH90N045R Datasheet. Specs and Replacement

Type Designator: DH90N045R  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 98 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 76 nS

Cossⓘ - Output Capacitance: 652 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: TO220

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DH90N045R datasheet

 ..1. Size:1390K  cn wxdh
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DH90N045R

DH90N045R/DHF90N045R/DHI90N045R DHE90N045R/DHB90N045R/DHD90N045R 120A 98V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 98V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.6m DS(on) (TYP) the RoHS standard. 1 3 S I = 120A D 2 Feature... See More ⇒

 8.1. Size:1181K  cn wxdh
 dh90n055r dhf90n055r dhi90n055r dhe90n055r.pdf pdf_icon

DH90N045R

DH90N055R/DHF90N055R/ DHI90N055R/DHE90N055R 120A 90V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 90V DSS advanced splite gate technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 5.5m DS(on) (TYP) G standard. 1 I = 120A 3 S D 2 Features Fast switching Lo... See More ⇒

Detailed specifications: DHS015N06E, DHS020N04, DHS020N04B, DH081N03E, DH081N03F, DH081N03I, DH850N10I, DH85N08, STP80NF70, DH90N055R, DH9Z24, DHB035N04, DHB100N03B13, DHB16N06, DHB3205A, DHB3N90, DHB50N03

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