All MOSFET. DH90N055R Equivalents Search

 

DH90N055R Spec and Replacement


   Type Designator: DH90N055R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 164 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 90 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 790 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO220

 DH90N055R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DH90N055R Specs

 ..1. Size:1181K  cn wxdh
 dh90n055r dhf90n055r dhi90n055r dhe90n055r.pdf pdf_icon

DH90N055R

DH90N055R/DHF90N055R/ DHI90N055R/DHE90N055R 120A 90V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 90V DSS advanced splite gate technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 5.5m DS(on) (TYP) G standard. 1 I = 120A 3 S D 2 Features Fast switching Lo... See More ⇒

 8.1. Size:1390K  cn wxdh
 dh90n045r dhf90n045r dhi90n045r dhe90n045r dhb90n045r dhd90n045r.pdf pdf_icon

DH90N055R

DH90N045R/DHF90N045R/DHI90N045R DHE90N045R/DHB90N045R/DHD90N045R 120A 98V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 98V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.6m DS(on) (TYP) the RoHS standard. 1 3 S I = 120A D 2 Feature... See More ⇒

Detailed specifications: DHS020N04 , DHS020N04B , DH081N03E , DH081N03F , DH081N03I , DH850N10I , DH85N08 , DH90N045R , IRFP450 , DH9Z24 , DHB035N04 , DHB100N03B13 , DHB16N06 , DHB3205A , DHB3N90 , DHB50N03 , DHB50N06FZC .

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