All MOSFET. DH90N055R Datasheet

 

DH90N055R Datasheet and Replacement


   Type Designator: DH90N055R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 164 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 90 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 47 nC
   trⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 790 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO220
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DH90N055R Datasheet (PDF)

 ..1. Size:1181K  cn wxdh
 dh90n055r dhf90n055r dhi90n055r dhe90n055r.pdf pdf_icon

DH90N055R

DH90N055R/DHF90N055R/DHI90N055R/DHE90N055R120A 90V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 90VDSSadvanced splite gate technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 5.5mDS(on) (TYP)Gstandard.1I = 120A3 S D2 Features Fast switching Lo

 8.1. Size:1390K  cn wxdh
 dh90n045r dhf90n045r dhi90n045r dhe90n045r dhb90n045r dhd90n045r.pdf pdf_icon

DH90N055R

DH90N045R/DHF90N045R/DHI90N045RDHE90N045R/DHB90N045R/DHD90N045R120A 98V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 98VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 4.6mDS(on) (TYP)the RoHS standard.13 SI = 120AD2 Feature

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