DH9Z24 Datasheet and Replacement
Type Designator: DH9Z24
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 43 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO220
DH9Z24 substitution
DH9Z24 Datasheet (PDF)
dh9z24 dhf9z24 dhi9z24 dhe9z24 dhb9z24 dhd9z24.pdf

DH9Z24/DHF9Z24/DHI9Z24DHE9Z24/DHB9Z24/DHD9Z2420A 60V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhanced vdmosfets, used advancedV = -60VDSStrench technology and design, provide to excellentRdson with low gate charge. Which accords with theR =58.5mDS(on) (TYP)RoHS standard.I = -20AD2 Features Fast switching Low on resistance
Datasheet: DHS020N04B , DH081N03E , DH081N03F , DH081N03I , DH850N10I , DH85N08 , DH90N045R , DH90N055R , IRFZ24N , DHB035N04 , DHB100N03B13 , DHB16N06 , DHB3205A , DHB3N90 , DHB50N03 , DHB50N06FZC , DHB80N08B22 .
History: AOT125A60L | AP3310GJ | IRFF213 | SIHFP360LC | WMO35P06TS | RU1HP60R | WMO35P04T1
Keywords - DH9Z24 MOSFET datasheet
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DH9Z24 replacement
History: AOT125A60L | AP3310GJ | IRFF213 | SIHFP360LC | WMO35P06TS | RU1HP60R | WMO35P04T1



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