All MOSFET. FQU11P06 Datasheet

 

FQU11P06 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQU11P06

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 38 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 9.4 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.185 Ohm

Package: TO251_IPAK

FQU11P06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQU11P06 Datasheet (PDF)

1.1. fqd11p06 fqu11p06.pdf Size:851K _fairchild_semi

FQU11P06
FQU11P06

January 2009 QFET FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -9.4A, -60V, RDS(on) = 0.185? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been especially tailored

1.2. fqu11p06tu.pdf Size:851K _fairchild_semi

FQU11P06
FQU11P06

January 2009 QFET® FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -9.4A, -60V, RDS(on) = 0.185Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC) planar stripe, DMOS technology. • Low Crss ( typical 45 pF) This advanced technology has been especi

 

Datasheet: FQT4N25 , FQT5P10 , FQT7N10 , FDB14AN06L_F085 , FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , IRFZ44 , FQU12N20 , FDPF085N10A , FQU13N06L , FQU13N10L , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A .

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