All MOSFET. DHB3N90 Datasheet

 

DHB3N90 Datasheet and Replacement


   Type Designator: DHB3N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 44 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm
   Package: TO251
 

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DHB3N90 Datasheet (PDF)

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DHB3N90

DH3N90/DHF3N90/DHI3N90/DHE3N90/DHB3N90/DHD3N903A 900V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the2 DV = 900VDSSself-aligned planar technology which reduce theconduction loss, improve switching performance andR = 4.7DS(on) (TYP)Genhance the avalanche energy. Which accords with the1RoHS standard.I = 3

Datasheet: DH85N08 , DH90N045R , DH90N055R , DH9Z24 , DHB035N04 , DHB100N03B13 , DHB16N06 , DHB3205A , P0903BDG , DHB50N03 , DHB50N06FZC , DHB80N08B22 , DH066N06 , DH066N06D , DH066N06E , DH072N07 , DH072N07B .

History: STD75N3LLH6 | AM90N06-04M2B | AUIRFP4227 | VBZE04N03 | SSM3K56CT | IXTJ3N150 | UTC654

Keywords - DHB3N90 MOSFET datasheet

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