All MOSFET. DH066N06E Datasheet

 

DH066N06E Datasheet and Replacement


   Type Designator: DH066N06E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 77 nC
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO263
 

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DH066N06E Datasheet (PDF)

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DH066N06E

DH066N06/DH066N06E110A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedV = 60VDSSadvanced trench technology design, provided excellent 2 DRdson and low gate charge. Which accords with the RoHSR = 5.7mTO-220DS(on) (TYP)standard.G1R = 5.5mTO-263DS(on) (TYP)3 S2 FeaturesI = 110AD

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DH066N06E

DH066N06D100A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 60VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 5.8mG DS(on) (TYP)standard.1I = 100A3 S D2 Features Low on resistance Low gate charge Fast switching

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