DH066N06E Datasheet. Specs and Replacement

Type Designator: DH066N06E  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO263

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DH066N06E datasheet

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DH066N06E

DH066N06/DH066N06E 110A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used V = 60V DSS advanced trench technology design, provided excellent 2 D Rdson and low gate charge. Which accords with the RoHS R = 5.7m TO-220 DS(on) (TYP) standard. G 1 R = 5.5m TO-263 DS(on) (TYP) 3 S 2 Features I = 110A D ... See More ⇒

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DH066N06E

DH066N06D 100A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 60V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 5.8m G DS(on) (TYP) standard. 1 I = 100A 3 S D 2 Features Low on resistance Low gate charge Fast switching ... See More ⇒

Detailed specifications: DHB16N06, DHB3205A, DHB3N90, DHB50N03, DHB50N06FZC, DHB80N08B22, DH066N06, DH066N06D, AO3407, DH072N07, DH072N07B, DH072N07D, DH072N07E, DH072N07F, DH072N07I, DH075N08, DH075N08E

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