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DH066N06E Spec and Replacement


   Type Designator: DH066N06E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO263

 DH066N06E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DH066N06E Specs

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DH066N06E

DH066N06/DH066N06E 110A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used V = 60V DSS advanced trench technology design, provided excellent 2 D Rdson and low gate charge. Which accords with the RoHS R = 5.7m TO-220 DS(on) (TYP) standard. G 1 R = 5.5m TO-263 DS(on) (TYP) 3 S 2 Features I = 110A D ... See More ⇒

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DH066N06E

DH066N06D 100A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 60V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 5.8m G DS(on) (TYP) standard. 1 I = 100A 3 S D 2 Features Low on resistance Low gate charge Fast switching ... See More ⇒

Detailed specifications: DHB16N06 , DHB3205A , DHB3N90 , DHB50N03 , DHB50N06FZC , DHB80N08B22 , DH066N06 , DH066N06D , AO3407 , DH072N07 , DH072N07B , DH072N07D , DH072N07E , DH072N07F , DH072N07I , DH075N08 , DH075N08E .

Keywords - DH066N06E MOSFET specs

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