FQU12N20 PDF Specs and Replacement
Type Designator: FQU12N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO251 IPAK
FQU12N20 substitution
FQU12N20 PDF Specs
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January 2009 QFET FQD12N20 / FQU12N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 18 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especia... See More ⇒
fqd12n20ltf fqd12n20ltm fqd12n20l fqu12n20l.pdf
January 2009 QFET FQD12N20L / FQU12N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been ... See More ⇒
Detailed specifications: FQT5P10 , FQT7N10 , FDB14AN06LF085 , FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , 50N06 , FDPF085N10A , FQU13N06L , FQU13N10L , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L .
Keywords - FQU12N20 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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