All MOSFET. FQU12N20 Datasheet

 

FQU12N20 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQU12N20

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 55 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 9 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.28 Ohm

Package: TO251_IPAK

FQU12N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQU12N20 Datasheet (PDF)

1.1. fqd12n20l fqu12n20l.pdf Size:699K _fairchild_semi

FQU12N20
FQU12N20

January 2009 QFET® FQD12N20L / FQU12N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9.0A, 200V, RDS(on) = 0.28? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16 nC) planar stripe, DMOS technology. • Low Crss ( typical 17 pF) This advanced technology has been especially tai

1.2. fqd12n20 fqu12n20.pdf Size:801K _fairchild_semi

FQU12N20
FQU12N20

January 2009 QFET® FQD12N20 / FQU12N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 9.0A, 200V, RDS(on) = 0.28? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18 nC) planar stripe, DMOS technology. • Low Crss ( typical 18 pF) This advanced technology has been especially tailored t

 

Datasheet: FQT5P10 , FQT7N10 , FDB14AN06L_F085 , FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , IRF640 , FDPF085N10A , FQU13N06L , FQU13N10L , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L .

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