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DH072N07E Spec and Replacement


   Type Designator: DH072N07E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 104 nS
   Cossⓘ - Output Capacitance: 245 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO263

 DH072N07E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DH072N07E Specs

 ..1. Size:1276K  cn wxdh
 dh072n07 dh072n07f dh072n07i dh072n07e dh072n07b dh072n07d.pdf pdf_icon

DH072N07E

DH072N07/DH072N07F/DH072N07I/ DH072N07E/DH072N07B/DH072N07D 80A 68V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 68V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 7.2m G DS(on) (Type) standard. 1 I = 80A 3 S D 2 Features Fast switchin... See More ⇒

Detailed specifications: DHB50N06FZC , DHB80N08B22 , DH066N06 , DH066N06D , DH066N06E , DH072N07 , DH072N07B , DH072N07D , IRF2807 , DH072N07F , DH072N07I , DH075N08 , DH075N08E , DH081N03 , DH081N03B , DH081N03D , DHD7N65 .

History: DH066N06D | DH072N07B | DH072N07I | 2SJ387L

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