DH072N07I Datasheet. Specs and Replacement

Type Designator: DH072N07I  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 104 nS

Cossⓘ - Output Capacitance: 245 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: TO262

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DH072N07I datasheet

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DH072N07I

DH072N07/DH072N07F/DH072N07I/ DH072N07E/DH072N07B/DH072N07D 80A 68V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 68V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 7.2m G DS(on) (Type) standard. 1 I = 80A 3 S D 2 Features Fast switchin... See More ⇒

Detailed specifications: DH066N06, DH066N06D, DH066N06E, DH072N07, DH072N07B, DH072N07D, DH072N07E, DH072N07F, IRFZ24N, DH075N08, DH075N08E, DH081N03, DH081N03B, DH081N03D, DHD7N65, DHD80N03, DHD80N08

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