All MOSFET. DH081N03 Datasheet

 

DH081N03 Datasheet and Replacement


   Type Designator: DH081N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 20 nC
   tr ⓘ - Rise Time: 91 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO220
 

 DH081N03 substitution

   - MOSFET ⓘ Cross-Reference Search

 

DH081N03 Datasheet (PDF)

 ..1. Size:1204K  cn wxdh
 dh081n03 dh081n03f dh081n03i dh081n03e dh081n03b dh081n03d.pdf pdf_icon

DH081N03

DH081N03/DH081N03F/DH081N03IDH081N03E/DH081N03B/DH081N03D60A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV =30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR =8.1mDS(on) (TYP)standard.13 SI =60AD2 Features Low on resistanc

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Keywords - DH081N03 MOSFET datasheet

 DH081N03 cross reference
 DH081N03 equivalent finder
 DH081N03 lookup
 DH081N03 substitution
 DH081N03 replacement

 

 
Back to Top

 


 
.