All MOSFET. DH081N03 Datasheet

 

DH081N03 Datasheet and Replacement


   Type Designator: DH081N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 91 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO220
 

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DH081N03 Datasheet (PDF)

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DH081N03

DH081N03/DH081N03F/DH081N03IDH081N03E/DH081N03B/DH081N03D60A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV =30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR =8.1mDS(on) (TYP)standard.13 SI =60AD2 Features Low on resistanc

Datasheet: DH072N07 , DH072N07B , DH072N07D , DH072N07E , DH072N07F , DH072N07I , DH075N08 , DH075N08E , AO3401 , DH081N03B , DH081N03D , DHD7N65 , DHD80N03 , DHD80N08 , DHD9Z24 , DHDSJ11N65 , DHDSJ13N65 .

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