FDPF085N10A PDF and Equivalents Search

 

FDPF085N10A Specs and Replacement

Type Designator: FDPF085N10A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: TO220F

FDPF085N10A substitution

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FDPF085N10A datasheet

 ..1. Size:592K  fairchild semi
fdpf085n10a.pdf pdf_icon

FDPF085N10A

November 2013 FDPF085N10A N-Channel PowerTrench MOSFET 100 V, 40 A, 8.5 m Features Description RDS(on) = 6.5 m (Typ.) @ VGS = 10 V, ID = 40 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Fast Switching Speed lored to minimize the on-state resistance while maintaining Low Gate Charge, QG = 31 nC... See More ⇒

 ..2. Size:275K  inchange semiconductor
fdpf085n10a.pdf pdf_icon

FDPF085N10A

isc N-Channel MOSFET Transistor FDPF085N10A FEATURES With TO-220F packaging Drain Source Voltage- V 100V DSS Static drain-source on-resistance RDS(on) 8.5m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =... See More ⇒

 9.1. Size:393K  fairchild semi
fdpf041n06bl1.pdf pdf_icon

FDPF085N10A

December 2014 FDPF041N06BL1 N-Channel PowerTrench MOSFET 60 V, 77 A, 4.1 m Features Description RDS(on) = 3.5 m ( Typ.) @ VGS = 10 V, ID = 77 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Low FOM RDS(on)*QG lored to minimize the on-state resistance while maintaining superior switching performa... See More ⇒

 9.2. Size:416K  fairchild semi
fdpf045n10a.pdf pdf_icon

FDPF085N10A

August 2014 FDPF045N10A N-Channel PowerTrench MOSFET 100 V, 67 A, 4.5 m Features Description RDS(on) = 3.7 m ( Typ.)@ VGS = 10 V, ID = 67 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has Fast Switching Speed been tailored to minimize the on-state resistance while maintain- ing superior switching performance. ... See More ⇒

Detailed specifications: FQT7N10 , FDB14AN06LF085 , FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , IRFP460 , FQU13N06L , FQU13N10L , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 .

Keywords - FDPF085N10A MOSFET specs

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