FDPF085N10A. Аналоги и основные параметры
Наименование производителя: FDPF085N10A
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 33.3 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm
Тип корпуса: TO220F
Аналог (замена) для FDPF085N10A
- подборⓘ MOSFET транзистора по параметрам
FDPF085N10A даташит
fdpf085n10a.pdf
November 2013 FDPF085N10A N-Channel PowerTrench MOSFET 100 V, 40 A, 8.5 m Features Description RDS(on) = 6.5 m (Typ.) @ VGS = 10 V, ID = 40 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Fast Switching Speed lored to minimize the on-state resistance while maintaining Low Gate Charge, QG = 31 nC
fdpf085n10a.pdf
isc N-Channel MOSFET Transistor FDPF085N10A FEATURES With TO-220F packaging Drain Source Voltage- V 100V DSS Static drain-source on-resistance RDS(on) 8.5m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =
fdpf041n06bl1.pdf
December 2014 FDPF041N06BL1 N-Channel PowerTrench MOSFET 60 V, 77 A, 4.1 m Features Description RDS(on) = 3.5 m ( Typ.) @ VGS = 10 V, ID = 77 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Low FOM RDS(on)*QG lored to minimize the on-state resistance while maintaining superior switching performa
fdpf045n10a.pdf
August 2014 FDPF045N10A N-Channel PowerTrench MOSFET 100 V, 67 A, 4.5 m Features Description RDS(on) = 3.7 m ( Typ.)@ VGS = 10 V, ID = 67 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has Fast Switching Speed been tailored to minimize the on-state resistance while maintain- ing superior switching performance.
Другие MOSFET... FQT7N10 , FDB14AN06LF085 , FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , IRFP460 , FQU13N06L , FQU13N10L , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 .
History: STP50N05L | FQU13N06L
History: STP50N05L | FQU13N06L
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