Справочник MOSFET. FDPF085N10A

 

FDPF085N10A Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDPF085N10A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 33.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 40 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 31 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm
   Тип корпуса: TO220F
     - подбор MOSFET транзистора по параметрам

 

FDPF085N10A Datasheet (PDF)

 ..1. Size:592K  fairchild semi
fdpf085n10a.pdfpdf_icon

FDPF085N10A

November 2013FDPF085N10AN-Channel PowerTrench MOSFET100 V, 40 A, 8.5 mFeatures Description RDS(on) = 6.5 m (Typ.) @ VGS = 10 V, ID = 40 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Fast Switching Speedlored to minimize the on-state resistance while maintaining Low Gate Charge, QG = 31 nC

 ..2. Size:275K  inchange semiconductor
fdpf085n10a.pdfpdf_icon

FDPF085N10A

isc N-Channel MOSFET Transistor FDPF085N10AFEATURESWith TO-220F packagingDrain Source Voltage-: V 100VDSSStatic drain-source on-resistance:RDS(on) 8.5m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =

 9.1. Size:393K  fairchild semi
fdpf041n06bl1.pdfpdf_icon

FDPF085N10A

December 2014FDPF041N06BL1N-Channel PowerTrench MOSFET 60 V, 77 A, 4.1 mFeatures Description RDS(on) = 3.5 m ( Typ.) @ VGS = 10 V, ID = 77 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Low FOM RDS(on)*QGlored to minimize the on-state resistance while maintaining superior switching performa

 9.2. Size:416K  fairchild semi
fdpf045n10a.pdfpdf_icon

FDPF085N10A

August 2014FDPF045N10AN-Channel PowerTrench MOSFET 100 V, 67 A, 4.5 mFeatures Description RDS(on) = 3.7 m ( Typ.)@ VGS = 10 V, ID = 67 A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has Fast Switching Speedbeen tailored to minimize the on-state resistance while maintain-ing superior switching performance.

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History: FQU10N20C

 

 
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