DHDSJ7N65 Specs and Replacement
Type Designator: DHDSJ7N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 31 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.62 Ohm
Package: TO252
DHDSJ7N65 substitution
DHDSJ7N65 datasheet
dhdsj7n65 dhbsj7n65.pdf
DHDSJ7N65/DHBSJ7N65 7A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced VDMOSFETs, is using 2 D V = 650V DSS advanced super junction technology and design to provide excellent Rdson with low gate charge. Which R = 0.56 DS(on) (TYP) G accords with the RoHS standard. 1 I = 7A 3 S D 2 Features Fast switching Low on resistance... See More ⇒
dhsj11n65 dhfsj11n65 dhisj11n65 dhesj11n65 dhbsj11n65 dhdsj11n65.pdf
DHSJ11N65/DHFSJ11N65/DHISJ11N65/ DHESJ11N65/DHBSJ11N65/DHDSJ11N65 11A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced vdmosfets, is using advanced super junction technology and design to provide excellent 2 D V = 650V DSS Rds(on) with low gate charge. Which accords with the R = 0.33 DS(on) (TYP) RoHS standard. G 1 I = 11A 3 S D 2 Features ... See More ⇒
dhsj13n65 dhfsj13n65 dhisj13n65 dhesj13n65 dhbsj13n65 dhdsj13n65.pdf
DHSJ13N65/DHFSJ13N65/DHISJ13N65 DHESJ13N65/DHBSJ13N65/DHDSJ13N65 13A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced vdmosfets, is using advanced 2 D V = 650V DSS super junction technology and design to provide excellent Rdson with low gate charge. Which accords with the R = 0.28 DS(on) (TYP) G RoHS standard. 1 I = 13A 3 S D 2 Features F... See More ⇒
dhdsj5n65 dhbsj5n65.pdf
DHDSJ5N65/DHBSJ5N65 4.8A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced VDMOSFETs, is using 2 D V = 650V DSS advanced super junction technology and design to provide excellent Rdson with low gate charge. Which R = 0.87 DS(on) (TYP) G accords with the RoHS standard. 1 I = 4.8A 3 S D 2 Features Fast switching Low on resistance Lo... See More ⇒
Detailed specifications: DH081N03D , DHD7N65 , DHD80N03 , DHD80N08 , DHD9Z24 , DHDSJ11N65 , DHDSJ13N65 , DHDSJ5N65 , IRLB3034 , DHDZ24B31 , DHE029N08 , DHE035N04 , DHE100N03B13 , DHE10H035R , DHE10H037R , DHE16N06 , DHE3205A .
History: IXTY01N100D
Keywords - DHDSJ7N65 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: IXTY01N100D
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