DHDSJ7N65 Datasheet and Replacement. Cross Reference Search

DHDSJ7N65 Datasheet (PDF)

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DHDSJ7N65/DHBSJ7N65 7A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced VDMOSFETs, is using 2 DV = 650V DSSadvanced super junction technology and design to provide excellent Rdson with low gate charge. Which R = 0.56 DS(on) (TYP)Gaccords with the RoHS standard. 1I = 7A 3 S D2 Features Fast switching Low on resistance

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DHSJ11N65/DHFSJ11N65/DHISJ11N65/DHESJ11N65/DHBSJ11N65/DHDSJ11N6511A 650V N-channel Super Junction Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is using advancedsuper junction technology and design to provide excellent 2 DV = 650VDSSRds(on) with low gate charge. Which accords with theR = 0.33DS(on) (TYP)RoHS standard. G1I = 11A3 S D2 Features

9.2. Size:1649K cn wxdh
dhsj13n65 dhfsj13n65 dhisj13n65 dhesj13n65 dhbsj13n65 dhdsj13n65.pdf pdf_icon

DHSJ13N65/DHFSJ13N65/DHISJ13N65DHESJ13N65/DHBSJ13N65/DHDSJ13N6513A 650V N-channel Super Junction Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is using advanced2 DV = 650VDSSsuper junction technology and design to provide excellentRdson with low gate charge. Which accords with theR = 0.28DS(on) (TYP)GRoHS standard.1I = 13A3 S D2 Features F

9.3. Size:1116K cn wxdh
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DHDSJ5N65/DHBSJ5N654.8A 650V N-channel Super Junction Power MOSFET1 DescriptionThese N-channel enhanced VDMOSFETs, is using2 DV = 650VDSSadvanced super junction technology and design toprovide excellent Rdson with low gate charge. WhichR = 0.87DS(on) (TYP)Gaccords with the RoHS standard.1I = 4.8A3 S D2 Features Fast switching Low on resistance Lo

Datasheet: DH081N03D , DHD7N65 , DHD80N03 , DHD80N08 , DHD9Z24 , DHDSJ11N65 , DHDSJ13N65 , DHDSJ5N65 , 60N06 , DHDZ24B31 , DHE029N08 , DHE035N04 , DHE100N03B13 , DHE10H035R , DHE10H037R , DHE16N06 , DHE3205A .