DHDZ24B31 Datasheet. Specs and Replacement
Type Designator: DHDZ24B31 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 92.9 nS
Cossⓘ - Output Capacitance: 85 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: TO252
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DHDZ24B31 substitution
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DHDZ24B31 datasheet
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DHZ24B31/DHFZ24B31/DHIZ24B31/ DHEZ24B31/DHBZ24B31/DHDZ24B31 30A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 60V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 24m DS(on) (TYP) standard. 1 3 S I = 30A D 2 Features Low on resist... See More ⇒
Detailed specifications: DHD7N65, DHD80N03, DHD80N08, DHD9Z24, DHDSJ11N65, DHDSJ13N65, DHDSJ5N65, DHDSJ7N65, IRF9640, DHE029N08, DHE035N04, DHE100N03B13, DHE10H035R, DHE10H037R, DHE16N06, DHE3205A, DHE3N90
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
