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DHE029N08 Spec and Replacement


   Type Designator: DHE029N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 245 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 1030 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO263

 DHE029N08 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DHE029N08 Specs

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 dh029n08 dhi029n08 dhe029n08 dh029n08d dh029n08b.pdf pdf_icon

DHE029N08

DH029N08/DHI029N08/DHE029N08/ DH029N08D/DH029N08B 180A 80V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent 2 D Rdson and low gate charge. Which accords with the RoHS V = 80V DSS standard. G R = 2.9m DS(on) (Type) 1 2 Features 3 S I = 180A D Fast switching L... See More ⇒

Detailed specifications: DHD80N03 , DHD80N08 , DHD9Z24 , DHDSJ11N65 , DHDSJ13N65 , DHDSJ5N65 , DHDSJ7N65 , DHDZ24B31 , IRFB7545 , DHE035N04 , DHE100N03B13 , DHE10H035R , DHE10H037R , DHE16N06 , DHE3205A , DHE3N90 , DHFSJ8N65 .

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