DHE035N04 Datasheet. Specs and Replacement
Type Designator: DHE035N04 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 155 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 68 nS
Cossⓘ - Output Capacitance: 690 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO263
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DHE035N04 substitution
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DHE035N04 datasheet
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DH035N04/DHF035N04/DHI035N04/ DHE035N04/DHB035N04/DHD035N04 155A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets used advanced 2 D V = 40V DSS trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. R = 2.3m DS(on) (TYP) G 1 2 Features I = 155A D 3 S Fast switching High... See More ⇒
Detailed specifications: DHD80N08, DHD9Z24, DHDSJ11N65, DHDSJ13N65, DHDSJ5N65, DHDSJ7N65, DHDZ24B31, DHE029N08, AON7403, DHE100N03B13, DHE10H035R, DHE10H037R, DHE16N06, DHE3205A, DHE3N90, DHFSJ8N65, DHFZ24B31
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